hi-sincerity microelectronics corp. spec. no. : he6727 issued date : 1998.07.01 revised date : 2002.01.07 page no. : 1/4 HLB124E hsmc product specification HLB124E npn epitaxial planar transistor description the HLB124E is designed for high voltage, high speed switching inductive circuits, and amplifier applications. features ? high speed switching ? low saturation voltage ? high reliability absolute maximum ratings (ta=25 c) ? maximum temperatures storage temperature ........................................................................................................ -55 ~ +150 c junction temperature ........................................................................................................... ..... +150 c ? maximum power dissipation total power dissipation (tc=25 c)................................................................................................. 35 w ? maximum voltages and currents (ta=25 c) bvcbo collector to base voltage ................................................................................................ . 600 v bvceo collector to emitter voltage ............................................................................................. . 400 v bvebo emitter to base voltage .................................................................................................. ..... 8 v ic collector current (dc)...................................................................................................... ............. 2 a ic collector current (pulse)................................................................................................... ............ 4 a ib base current (dc)........................................................................................................... ...............1 a ib base curre nt (pulse)........................................................................................................ ............. 2 a characteristics (ta=25 c) symbol min. typ. max. unit test conditions bvcbo 600 - - v ic=1ma bvceo 400 - - v ic=10ma bvebo 8 - - v ie=1ma icbo - - 10 ua vcb=600v iebo - - 10 ua veb=9v, ic=0 *vce(sat)1 - - 0.3 v ic=0.1a, ib=10ma *vce(sat)2 - - 0.8 v ic=0.3a, ib=30ma *vbe(sat)1 - - 0.9 v ic=0.1a, ib=10ma *vbe(sat)2 - - 1.2 v ic=0.3a, ib=30ma *hfe1 10 - 40 vce=5v, ic=0.3a *hfe2 10 - - vce=5v, ic=0.5a *hfe3 6 - - vce=5v, ic=1a ft 15 - - mhz vce=10v, ic=0.3, f=1mhz *pulse test : pulse width 380us, duty cycle 2% classification of hfe1 rank b1 b2 b3 b4 b5 b6 range 10~17 13~22 18~ 27 23~32 28~37 33~40 to-220
hi-sincerity microelectronics corp. spec. no. : he6727 issued date : 1998.07.01 revised date : 2002.01.07 page no. : 2/4 HLB124E hsmc product specification characteristics curve current gain & collector current 1 10 100 1 10 100 1000 10000 collector current i c (ma) hfe 25 o c 75 o c 125 o c hfe @ v ce =5v saturation voltage & collector current 10 100 1000 10000 100000 1 10 100 1000 10000 collector current i c (ma) saturation voltage (mv) 25 o c 75 o c 125 o c v ce(sat) @ i c =10i b saturation voltage & collector current 100 1000 10000 1 10 100 1000 10000 collector current i c (ma) saturation voltage (mv) 25 o c 75 o c 125 o c v be(sat) @ i c =10i b on voltage & collector current 100 1000 1 10 100 1000 10000 collector current (ma) on voltage (mv) v ce =5v capacitance & reverse-biased voltage 1 10 100 1 10 100 reverse biased voltage (v) capacitance (pf) cob switching time & collector current 0.1 1 10 0.1 1 10 collector current (a) switching time (us ) tstg tf ton v cc =100v, i c =5i b1 =5i b2
hi-sincerity microelectronics corp. spec. no. : he6727 issued date : 1998.07.01 revised date : 2002.01.07 page no. : 3/4 HLB124E hsmc product specification safe operating area 1 10 100 1000 10000 1 10 100 1000 forward voltage (v) collector current (ma ) p t =1 ms p t =100 ms p t =1 s
hi-sincerity microelectronics corp. spec. no. : he6727 issued date : 1998.07.01 revised date : 2002.01.07 page no. : 4/4 HLB124E hsmc product specification to-220ab dimension *: typical inches millimeters inches millimeters dim min. max. min. max. dim min. max. min. max. a 0.2197 0.2949 5.58 7.49 i - *0.1508 - *3.83 b 0.3299 0.3504 8.38 8.90 k 0.0295 0.0374 0.75 0.95 c 0.1732 0.185 4.40 4.70 m 0.0449 0.0551 1.14 1.40 d 0.0453 0.0547 1.15 1.39 n - *0.1000 - *2.54 e 0.0138 0.0236 0.35 0.60 o 0.5000 0.5618 12.70 14.27 g 0.3803 0.4047 9.66 10.28 p 0.5701 0.6248 14.48 15.87 h - *0.6398 - *16.25 notes: 1.dimension and tolerance based on our spec. dated sep. 07,1997. 2.controlling dimension: millimeters. 3.maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 4.if there is any question with packing specification or packing method, please contact your local hsmc sales office. material: ? lead: 42 alloy; solder plating ? mold compound: epoxy resin family, flammability solid burning class: ul94v-0 important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of hsmc. ? hsmc reserves the right to make changes to its products without notice. ? hsmc semiconductor products are not warranted to be su itable for use in life-support applications, or systems. ? hsmc assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. head office and factory: ? head office (hi-sincerity microelectronics corp.) : 10f.,no. 61, sec. 2, chung-shan n. rd. taipei taiwan r.o.c. tel: 886-2-25212056 fax: 886-2-25632712, 25368454 ? factory 1: no. 38, kuang fu s. rd., fu-kou hsin-chu industrial park hsin-chu taiwan. r.o.c tel: 886-3-5983621~5 fax: 886-3-5982931 a b e g i k m o p 3 2 1 c n h d 4 style: pin 1.base 2.collector 3.emitter 3-lead to-220ab plastic package hsmc package code: e marking: hsmc logo part number date code product series rank
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